An innovative way of etching MoS2: Characterization and mechanistic investigation
文献类型：期刊论文
| 作者 | Huang, Y ; Wu, J ; Xu, XF ; Ho, YD ; Ni, GX ; Zou, Q ; Koon, GKW ; Zhao, WJ ; Neto, AHC ; Eda, G ; Shen, CM ; Ozyilmaz, B |
| 刊名 | NANO RESEARCH
 |
| 出版日期 | 2013 |
| 卷号 | 6期号:3页码:200 |
| 关键词 | MoS2 etching XeF2 graphene photoluminescence hexagonal |
| ISSN号 | 1998-0124 |
| 通讯作者 | Ozyilmaz, B (reprint author), Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore. |
| 中文摘要 | We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots, and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals. |
| 资助信息 | NRF-CRP [R-144-000-295-281]; Singapore National Research Foundation [NRF-RF2008-07]; Singapore Millennium Foundation (SMF)-NUS [R-144-001-271-592, R-144-001-271-646]; National Basic Research Program of China (973 Program) [2013CB933604, 2011CB932703] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/56771]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang, Y,Wu, J,Xu, XF,et al. An innovative way of etching MoS2: Characterization and mechanistic investigation[J]. NANO RESEARCH,2013,6(3):200. |
| APA | Huang, Y.,Wu, J.,Xu, XF.,Ho, YD.,Ni, GX.,...&Ozyilmaz, B.(2013).An innovative way of etching MoS2: Characterization and mechanistic investigation.NANO RESEARCH,6(3),200. |
| MLA | Huang, Y,et al."An innovative way of etching MoS2: Characterization and mechanistic investigation".NANO RESEARCH 6.3(2013):200. |
入库方式： OAI收割
来源：物理研究所
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