Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity
文献类型：期刊论文
| 作者 | MacLellan, DA ; Carroll, DC ; Gray, RJ ; Booth, N ; Burza, M ; Desjarlais, MP ; Du, F ; Gonzalez-Izquierdo, B ; Neely, D ; Powell, HW ; Robinson, APL ; Rusby, DR ; Scott, GG ; Yuan, XH ; Wahlstrom, CG ; McKenna, P |
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 出版日期 | 2013 |
| 卷号 | 111期号:9 |
| ISSN号 | 0031-9007 |
| 通讯作者 | MacLellan, DA (reprint author), Univ Strathclyde, SUPA, Dept Phys, Glasgow G4 0NG, Lanark, Scotland. |
| 中文摘要 | Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV. |
| 资助信息 | EPSRC [EP/J003832/1]; Swedish Research Council; National Science Foundation of China [11205100] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/56778]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | MacLellan, DA,Carroll, DC,Gray, RJ,et al. Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity[J]. PHYSICAL REVIEW LETTERS,2013,111(9). |
| APA | MacLellan, DA.,Carroll, DC.,Gray, RJ.,Booth, N.,Burza, M.,...&McKenna, P.(2013).Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity.PHYSICAL REVIEW LETTERS,111(9). |
| MLA | MacLellan, DA,et al."Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity".PHYSICAL REVIEW LETTERS 111.9(2013). |
入库方式： OAI收割
来源：物理研究所
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