Coexistence of Bulk and Surface Shubnikov-de Haas Oscillations in Bi2Se3
文献类型：期刊论文
| 作者 | Qu, FM ; Zhang, C ; Du, RR ; Lu, L |
| 刊名 | JOURNAL OF LOW TEMPERATURE PHYSICS
 |
| 出版日期 | 2013 |
| 卷号 | 170期号:5-6页码:397 |
| 关键词 | Topological insulator Topological surface state Bulk state Shubnikov-de Haas oscillation |
| ISSN号 | 0022-2291 |
| 通讯作者 | Zhang, C (reprint author), Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China. |
| 中文摘要 | Our Hall bar shape device based on Bi2Se3 nano-plate was fabricated and studied at a dilution temperature with a tilted magnetic field up to 45 Tesla. It is found that, three types of carriers, one of three-dimensional (3D) and two of two-dimensional (2D), were identified by analyzing the angular dependence of Shubnikov-de Haas (SdH) oscillations, which confirmed the coexistence of bulk carriers and band bending induced two-dimensional electron gas in our transport experiment. The co-contributions to quantum oscillations indicated the independence of these states, without smearing out by scattering between each other, which may lay the foundations for detecting topological surface states (TSS) with residual bulk carriers in Bi2Se3. |
| 资助信息 | 985 Foundation from Peking University [562-10910-006] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/56817]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Qu, FM,Zhang, C,Du, RR,et al. Coexistence of Bulk and Surface Shubnikov-de Haas Oscillations in Bi2Se3[J]. JOURNAL OF LOW TEMPERATURE PHYSICS,2013,170(5-6):397. |
| APA | Qu, FM,Zhang, C,Du, RR,&Lu, L.(2013).Coexistence of Bulk and Surface Shubnikov-de Haas Oscillations in Bi2Se3.JOURNAL OF LOW TEMPERATURE PHYSICS,170(5-6),397. |
| MLA | Qu, FM,et al."Coexistence of Bulk and Surface Shubnikov-de Haas Oscillations in Bi2Se3".JOURNAL OF LOW TEMPERATURE PHYSICS 170.5-6(2013):397. |
入库方式： OAI收割
来源：物理研究所
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