Determining polarity and dislocation core structures at atomic level for epitaxial AlN/(0001)6H-SiC from a single image in HRTEM
文献类型：期刊论文
| 作者 | Cui, YX ; Wang, YM ; Wen, C ; Ge, BH ; Li, FH ; Chen, Y ; Chen, H |
| 刊名 | ULTRAMICROSCOPY
 |
| 出版日期 | 2013 |
| 卷号 | 126页码:77 |
| 关键词 | High resolution transmission electron microscopy Image deconvolution Polarity Partial dislocation AIN |
| ISSN号 | 0304-3991 |
| 通讯作者 | Li, FH (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | The polarity of epitaxial AlN film grown on (0 0 0 1)6H-SiC and dislocation core structures in the film have been studied using a 200 kV LaB6 high-resolution transmission electron microscope of point resolution about 0.2 nm. A posterior image processing technique, the image deconvolution, was utilized to transform a single [2 (1) over bar (1) over bar 0] image that does not intuitively represent the structure into the projected structure map. The adjacent Al and N projected atomic columns with the interatomic distance 0.109 nm can be distinguished from each other by analyzing the image contrast change with the sample thickness based on the pseudo-weak phase object approximation. This makes possible to derive the polarity and core structures of partial dislocations in the epitaxial AlN film at atomic level from a single image without relying on any other additional structure information. The atomic configurations for two partial dislocations containing a 10-atom ring and a 12-atom ring, respectively, have been attained. The method is available for II-VI and other III-V compounds. Its principle and procedure are briefly introduced. (c) 2012 Elsevier B.V. All rights reserved. |
| 资助信息 | National High Technology Research and Development Program of China [2011AA03A112]; National Natural Science Foundation of China [10874207, 11104327, 11104226, 61106013] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/56883]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cui, YX,Wang, YM,Wen, C,et al. Determining polarity and dislocation core structures at atomic level for epitaxial AlN/(0001)6H-SiC from a single image in HRTEM[J]. ULTRAMICROSCOPY,2013,126:77. |
| APA | Cui, YX.,Wang, YM.,Wen, C.,Ge, BH.,Li, FH.,...&Chen, H.(2013).Determining polarity and dislocation core structures at atomic level for epitaxial AlN/(0001)6H-SiC from a single image in HRTEM.ULTRAMICROSCOPY,126,77. |
| MLA | Cui, YX,et al."Determining polarity and dislocation core structures at atomic level for epitaxial AlN/(0001)6H-SiC from a single image in HRTEM".ULTRAMICROSCOPY 126(2013):77. |
入库方式： OAI收割
来源：物理研究所
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