Doping nature of Cu in epitaxial topological insulator Bi2Te3 thin films
文献类型：期刊论文
| 作者 | Zhu, XG ; Wen, J ; Wang, G ; Chen, X ; Jia, JF ; Ma, XC ; He, K ; Wang, LL ; Xue, QK |
| 刊名 | SURFACE SCIENCE
 |
| 出版日期 | 2013 |
| 卷号 | 617页码:156 |
| 关键词 | Topological insulator Molecular beam epitaxy Angle resolved photoemission spectroscopy Doping effect |
| ISSN号 | 0039-6028 |
| 通讯作者 | Xue, QK (reprint author), Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China. |
| 中文摘要 | Using angle-resolved photoemission spectroscopy (ARPES), we investigate the electronic structure of Cu-doped topological insulator Bi2Te3 on Si(111) substrate prepared by molecular beam epitaxy (MBE) to clarify the doping nature of Cu atoms in the films. By systematic studying the structural and electronic properties of the Cu-doped Bi2Te3 films by different doping methods, we find that Cu acts as electron donors when deposited onto the surface of Bi2Te3 films while behave as holes when doped in the process of Bi2Te3 thin film growth. The model of the formation of Cu+, five/seven layer lamella structures and Cu2-xTe is proposed to explain the different doping mechanisms. The robustness of topological surface states and insensitivity to non-magnetic impurities is indicated. (C) 2013 Elsevier B.V. All rights reserved. |
| 资助信息 | National Natural Science Foundation of China (NSFC); Ministry of Science and Technology of Peoples Republic of China (MOST) |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/56904]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhu, XG,Wen, J,Wang, G,et al. Doping nature of Cu in epitaxial topological insulator Bi2Te3 thin films[J]. SURFACE SCIENCE,2013,617:156. |
| APA | Zhu, XG.,Wen, J.,Wang, G.,Chen, X.,Jia, JF.,...&Xue, QK.(2013).Doping nature of Cu in epitaxial topological insulator Bi2Te3 thin films.SURFACE SCIENCE,617,156. |
| MLA | Zhu, XG,et al."Doping nature of Cu in epitaxial topological insulator Bi2Te3 thin films".SURFACE SCIENCE 617(2013):156. |
入库方式： OAI收割
来源：物理研究所
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