Effect of 6H-SiC (11(2)over-bar0) substrate on epitaxial graphene revealed by Raman scattering
文献类型：期刊论文
| 作者 | Lin, JJ ; Guo, LW ; Jia, YP ; Chen, LL ; Lu, W ; Huang, J ; Chen, XL |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2013 |
| 卷号 | 22期号:1 |
| 关键词 | epitaxial graphene 6H-SiC (11(2)over-bar0) temperature dependent Raman scattering |
| ISSN号 | 1674-1056 |
| 通讯作者 | Guo, LW (reprint author), Chinese Acad Sci, Res & Dev Ctr Funct Crystals, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | A nonpolar SiC(11 (2) over bar0) substrate has been used to fabricate epitaxial graphene (EG). Two EGs with layer numbers of 8-10 (referred to as MLG) and 2-3 (referred to as FLG) were used as representative to study the substrate effect on EG through temperature-dependent Raman scattering. It is found that Raman lineshifts of G and 2D peaks of the MLG with temperature are consistent with that of free graphene, as predicted by theory calculation, indicating that the substrate influence on the MLG is undetectable. While Raman G peak lineshifts of the FLG to that of the free graphene are obvious, however, its lineshift rate (-0.016 cm(-1)/K) is almost one third of that (-0.043 cm(-1)/K) of an EG on 6H-SiC (0001) in the temperature range from 300 K to 400 K, indicating a weak substrate effect from SiC (11 (2) over bar0) on the FLG. This renders the FLG with a high mobility around 1812 cm(2).V-1.s(-1) at room temperature even with a very high carrier concentration about 2.95 x 10(13) cm(-2) (p-type). These suggest SiC (11 (2) over bar0) is more suitable for fabricating EG with high performance. |
| 资助信息 | National Basic Research Program of China [2011CB932700]; Knowledge Innovation Project of the Chinese Academy of Sciences [KJCX2-YW-W22]; National Natural Science Foundation of China [51072223, 50972162] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/56914]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lin, JJ,Guo, LW,Jia, YP,et al. Effect of 6H-SiC (11(2)over-bar0) substrate on epitaxial graphene revealed by Raman scattering[J]. CHINESE PHYSICS B,2013,22(1). |
| APA | Lin, JJ.,Guo, LW.,Jia, YP.,Chen, LL.,Lu, W.,...&Chen, XL.(2013).Effect of 6H-SiC (11(2)over-bar0) substrate on epitaxial graphene revealed by Raman scattering.CHINESE PHYSICS B,22(1). |
| MLA | Lin, JJ,et al."Effect of 6H-SiC (11(2)over-bar0) substrate on epitaxial graphene revealed by Raman scattering".CHINESE PHYSICS B 22.1(2013). |
入库方式： OAI收割
来源：物理研究所
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