Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor
文献类型：期刊论文
| 作者 | Yu, YX ; Lin, ZJ ; Luan, CB ; Wang, YT ; Chen, H ; Wang, ZG |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2013 |
| 卷号 | 22期号:6 |
| 关键词 | AlGaN/AlN/GaN heterostructure field-effect transistors quasi-two-dimensional model the polarization Coulomb field scattering the two-dimensional electron gas mobility |
| ISSN号 | 1674-1056 |
| 通讯作者 | Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. |
| 中文摘要 | We simulate the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths using the quasi-two-dimensional (quasi-2D) model. The calculation results obtained using the modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFETs at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases. |
| 资助信息 | National Natural Science Foundation of China [11174182]; Specialized Research Fund for the Doctoral Program of Higher Education, China [20110131110005] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/56946]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, YX,Lin, ZJ,Luan, CB,et al. Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor[J]. CHINESE PHYSICS B,2013,22(6). |
| APA | Yu, YX,Lin, ZJ,Luan, CB,Wang, YT,Chen, H,&Wang, ZG.(2013).Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor.CHINESE PHYSICS B,22(6). |
| MLA | Yu, YX,et al."Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor".CHINESE PHYSICS B 22.6(2013). |
入库方式： OAI收割
来源：物理研究所
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