中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electrostatic field effects on three-dimensional topological insulators

文献类型:期刊论文

作者Yang, WM ; Lin, CJ ; Liao, J ; Li, YQ
刊名CHINESE PHYSICS B
出版日期2013
卷号22期号:9
关键词topological insulator electron transport weak localization surface and interface
ISSN号1674-1056
通讯作者Li, YQ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要Three-dimensional topological insulators are a new class of quantum matter which has interesting connections to nearly all main branches of condensed matter physics. In this article, we briefly review the advances in the field effect control of chemical potential in three-dimensional topological insulators. It is essential to the observation of many exotic quantum phenomena predicted to emerge from the topological insulators and their hybrid structures with other materials. We also describe various methods for probing the surface state transport. Some challenges in experimental study of electron transport in topological insulators will also be briefly discussed.
资助信息National Basic Research Program of China [2012CB921703, 2009CB929101]; National Natural Science Foundation of China [91121003]; Chinese Academy of Sciences
语种英语
公开日期2014-01-16
源URL[http://ir.iphy.ac.cn/handle/311004/56961]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Yang, WM,Lin, CJ,Liao, J,et al. Electrostatic field effects on three-dimensional topological insulators[J]. CHINESE PHYSICS B,2013,22(9).
APA Yang, WM,Lin, CJ,Liao, J,&Li, YQ.(2013).Electrostatic field effects on three-dimensional topological insulators.CHINESE PHYSICS B,22(9).
MLA Yang, WM,et al."Electrostatic field effects on three-dimensional topological insulators".CHINESE PHYSICS B 22.9(2013).

入库方式: OAI收割

来源:物理研究所

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