Extraordinary hall balance
文献类型：期刊论文
| 作者 | Zhang, SL ; Liu, Y ; Collins-Mclntyre, LJ ; Hesjedal, T ; Zhang, JY ; Wang, SG ; Yu, GH |
| 刊名 | SCIENTIFIC REPORTS
 |
| 出版日期 | 2013 |
| 卷号 | 3 |
| ISSN号 | 2045-2322 |
| 通讯作者 | Hesjedal, T (reprint author), Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England. |
| 中文摘要 | Magnetoresistance (MR) effects are at the heart of modern information technology. However, future progress of giant and tunnelling MR based storage and logic devices is limited by the usable MR ratios of currently about 200% at room-temperature. Colossal MR structures, on the other hand, achieve their high MR ratios of up to 106% only at low temperatures and high magnetic fields. We introduce the extraordinary Hall balance (EHB) and demonstrate room-temperature MR ratios in excess of 31,000%. The new device concept exploits the extraordinary Hall effect in two separated ferromagnetic layers with perpendicular anisotropy in which the Hall voltages can be configured to be carefully balanced or tipped out of balance. Reprogrammable logic and memory is realised using a single EHB element. |
| 资助信息 | Semiconductor Research Corporation (SRC); National Key Basic Research Program of China [2009CB929203]; National Natural Science Foundation of China [11274371]; National Key Scientific Instrument & Equipment Development Project of China [2012YQ120048]; EPSRC (UK); University of Oxford's John Fell Fund |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/56995]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, SL,Liu, Y,Collins-Mclntyre, LJ,et al. Extraordinary hall balance[J]. SCIENTIFIC REPORTS,2013,3. |
| APA | Zhang, SL.,Liu, Y.,Collins-Mclntyre, LJ.,Hesjedal, T.,Zhang, JY.,...&Yu, GH.(2013).Extraordinary hall balance.SCIENTIFIC REPORTS,3. |
| MLA | Zhang, SL,et al."Extraordinary hall balance".SCIENTIFIC REPORTS 3(2013). |
入库方式： OAI收割
来源：物理研究所
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