Fabrication of GaN-based LEDs with 22 degrees undercut sidewalls by inductively coupled plasma reactive ion etching
文献类型：期刊论文
| 作者 | Wang, B ; Su, SC ; He, M ; Chen, H ; Wu, WB ; Zhang, WW ; Wang, Q ; Chen, YL ; Gao, Y ; Zhang, L ; Zhu, KB ; Lei, Y |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2013 |
| 卷号 | 22期号:10 |
| 关键词 | GaN light-emitting diode (LED) undercut |
| ISSN号 | 1674-1056 |
| 通讯作者 | He, M (reprint author), S China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China. |
| 中文摘要 | We use a simple and controllable method to fabricate GaN-based light-emitting diodes (LEDs) with 22 degrees undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching (ICP-RIE). Our experiment results show that the output powers of the LEDs with 22 degrees undercut sidewalls are 34.8 mW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection. |
| 资助信息 | National High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106, 2013AA03A101]; National Natural Science Foundation of China [11204360, 61210014, 61078046]; Science and Technology Innovation Program of Department of Education of Guangdong Province, China [2012CXZD0017]; Industry-Academia Research Union Special Fund of Guangdong Province, China [2012B091000169]; Science and Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund, China [2012B090600038] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57000]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, B,Su, SC,He, M,et al. Fabrication of GaN-based LEDs with 22 degrees undercut sidewalls by inductively coupled plasma reactive ion etching[J]. CHINESE PHYSICS B,2013,22(10). |
| APA | Wang, B.,Su, SC.,He, M.,Chen, H.,Wu, WB.,...&Lei, Y.(2013).Fabrication of GaN-based LEDs with 22 degrees undercut sidewalls by inductively coupled plasma reactive ion etching.CHINESE PHYSICS B,22(10). |
| MLA | Wang, B,et al."Fabrication of GaN-based LEDs with 22 degrees undercut sidewalls by inductively coupled plasma reactive ion etching".CHINESE PHYSICS B 22.10(2013). |
入库方式： OAI收割
来源：物理研究所
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