Fabrication of indium tin oxide bump/pit structures on GaN-based light emitting diodes
文献类型：期刊论文
| 作者 | Liu, Z ; Wang, YJ ; Yang, HF ; Yin, HX ; Quan, BG ; Xia, XX ; Li, WX ; Gu, CZ |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2013 |
| 卷号 | 31期号:1 |
| ISSN号 | 1071-1023 |
| 通讯作者 | Liu, Z (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | In the past several decades, significant progress has been made to improve the performance of semiconducting light emitting diodes (LEDs), which has resulted in a wide number of applications for LEDs in the information and energy fields. However, light extraction efficiency is limited due to remarkable total internal reflection on the device's surface due to the large refractive index of GaN and indium tin oxides (ITO). In this work, ITO bump and pit patterns were fabricated on the LED surface using an ion beam etching method via metal or resist masks, respectively. By changing the incident angle of the ion beam and the material of the masks, the effects of faceting and redeposition can be properly controlled, resulting in well-controlled manipulation of the shape of the fabricated bump/pit structures. By altering the etching time, the over-etched structures have a much smoother surface compared with the under-etched/in-etched structures. These bump/pit structures could have potential applications in LED light emitting enhancement and optical devices. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4772462] |
| 资助信息 | National Basic Research Program of China [2009CB930502]; National Natural Science Foundation of China [50825206, 1083401, 91023041, 61001045, 11174362]; CAS [KJCX2-EW-W02] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57001]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, Z,Wang, YJ,Yang, HF,et al. Fabrication of indium tin oxide bump/pit structures on GaN-based light emitting diodes[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2013,31(1). |
| APA | Liu, Z.,Wang, YJ.,Yang, HF.,Yin, HX.,Quan, BG.,...&Gu, CZ.(2013).Fabrication of indium tin oxide bump/pit structures on GaN-based light emitting diodes.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,31(1). |
| MLA | Liu, Z,et al."Fabrication of indium tin oxide bump/pit structures on GaN-based light emitting diodes".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 31.1(2013). |
入库方式： OAI收割
来源：物理研究所
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