中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
First-principles study of point defects in solar cell semiconductor CuI

文献类型:期刊论文

作者Chen, H ; Wang, CY ; Wang, JT ; Wu, Y ; Zhou, SX
刊名PHYSICA B-CONDENSED MATTER
出版日期2013
卷号413页码:116
关键词CuI Semiconductor Point defects First-principles
ISSN号0921-4526
通讯作者Wang, CY (reprint author), Cent Iron & Steel Res Inst, Beijing 100081, Peoples R China.
中文摘要Hybrid density functional theory is used to study the formation energies and transition levels of point defects V-Cu, V-I, I-Cu, Cu-I and O-I in CuI. It is shown that the Heyd-Scuseria-Ernzerhof (HSE06) method can accurately describe the band gap of bulk CuI. As a solar cell material, we find that p-type semiconductor CuI can be obtained under the iodine-rich and copper-poor conditions. Our results are in good agreement with experiment and provide an excellent account for tuning the structural and electronic properties of CuI. Crown Copyright (c) 2012 Published by Elsevier B.V. All rights reserved.
资助信息Natural Science Foundation of Beijing [2091003]; Institute of Applied Physics and Computational Mathematics in Beijing; Tsinghua National Laboratory for Information Science and Technology
语种英语
公开日期2014-01-16
源URL[http://ir.iphy.ac.cn/handle/311004/57025]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Chen, H,Wang, CY,Wang, JT,et al. First-principles study of point defects in solar cell semiconductor CuI[J]. PHYSICA B-CONDENSED MATTER,2013,413:116.
APA Chen, H,Wang, CY,Wang, JT,Wu, Y,&Zhou, SX.(2013).First-principles study of point defects in solar cell semiconductor CuI.PHYSICA B-CONDENSED MATTER,413,116.
MLA Chen, H,et al."First-principles study of point defects in solar cell semiconductor CuI".PHYSICA B-CONDENSED MATTER 413(2013):116.

入库方式: OAI收割

来源:物理研究所

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