From magnetically doped topological insulator to the quantum anomalous Hall effect
文献类型：期刊论文
| 作者 | He, K ; Ma, XC ; Chen, X ; Lu, L ; Wang, YY ; Xue, QK |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2013 |
| 卷号 | 22期号:6 |
| 关键词 | topological insulator quantum anomalous Hall effect quantum Hall effect ferromagnetic insulator molecular beam epitaxy |
| ISSN号 | 1674-1056 |
| 通讯作者 | He, K (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Quantum Hall effect (QHE), as a class of quantum phenomena that occur in macroscopic scale, is one of the most important topics in condensed matter physics. It has long been expected that QHE may occur without Landau levels so that neither external magnetic field nor high sample mobility is required for its study and application. Such a QHE free of Landau levels, can appear in topological insulators (TIs) with ferromagnetism as the quantized version of the anomalous Hall effect, i.e., quantum anomalous Hall (QAH) effect. Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs. With molecular beam epitaxy, we prepare thin films of Cr-doped (Bi,Sb)(2)Te-3 TIs with well-controlled chemical potential and long-range ferromagnetic order that can survive the insulating phase. In such thin films, we eventually observed the quantization of the Hall resistance at h/e(2) at zero field, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs, and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics. |
| 资助信息 | National Natural Science Foundation of China [11174343, 11134008]; National Basic Research Program of China [2013CB921702, 2009CB929400]; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57033]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | He, K,Ma, XC,Chen, X,et al. From magnetically doped topological insulator to the quantum anomalous Hall effect[J]. CHINESE PHYSICS B,2013,22(6). |
| APA | He, K,Ma, XC,Chen, X,Lu, L,Wang, YY,&Xue, QK.(2013).From magnetically doped topological insulator to the quantum anomalous Hall effect.CHINESE PHYSICS B,22(6). |
| MLA | He, K,et al."From magnetically doped topological insulator to the quantum anomalous Hall effect".CHINESE PHYSICS B 22.6(2013). |
入库方式： OAI收割
来源：物理研究所
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