Gate control of the electron spin-diffusion length in semiconductor quantum wells
文献类型：期刊论文
| 作者 | Wang, G ; Liu, BL ; Balocchi, A ; Renucci, P ; Zhu, CR ; Amand, T ; Fontaine, C ; Marie, X |
| 刊名 | NATURE COMMUNICATIONS
 |
| 出版日期 | 2013 |
| 卷号 | 4 |
| ISSN号 | 2041-1723 |
| 通讯作者 | Marie, X (reprint author), Univ Toulouse, INSA CNRS UPS, LPCNO, 135 Ave Rangueil, F-31077 Toulouse, France. |
| 中文摘要 | The spin diffusion length is a key parameter to describe the transport properties of spin polarized electrons in solids. Electrical spin injection in semiconductor structures, a major issue in spintronics, critically depends on this spin diffusion length. Gate control of the spin diffusion length could be of great importance for the operation of devices based on the electric field manipulation and transport of electron spin. Here we demonstrate that the spin diffusion length in a GaAs quantum well can be electrically controlled. Through the measurement of the spin diffusion coefficient by spin grating spectroscopy and of the spin relaxation time by time-resolved optical orientation experiments, we show that the diffusion length can be increased by more than 200% with an applied gate voltage of 5V. These experiments allow at the same time the direct simultaneous measurements of both the Rashba and Dresselhaus spin-orbit splittings. |
| 资助信息 | France-China NSFC-ANR research project SPINMAN [10911130356]; CAS [2011T1J37]; National Basic Research Program of China [2009CB930502]; National Science Foundation of China [10774183, 11174338] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57036]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, G,Liu, BL,Balocchi, A,et al. Gate control of the electron spin-diffusion length in semiconductor quantum wells[J]. NATURE COMMUNICATIONS,2013,4. |
| APA | Wang, G.,Liu, BL.,Balocchi, A.,Renucci, P.,Zhu, CR.,...&Marie, X.(2013).Gate control of the electron spin-diffusion length in semiconductor quantum wells.NATURE COMMUNICATIONS,4. |
| MLA | Wang, G,et al."Gate control of the electron spin-diffusion length in semiconductor quantum wells".NATURE COMMUNICATIONS 4(2013). |
入库方式： OAI收割
来源：物理研究所
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