Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems
文献类型：期刊论文
| 作者 | Wei, LL ; Shang, DS ; Sun, JR ; Lee, SB ; Sun, ZG ; Shen, BG |
| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2013 |
| 卷号 | 24期号:32 |
| ISSN号 | 0957-4484 |
| 通讯作者 | Wei, LL (reprint author), Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China. |
| 中文摘要 | We report a memristive switching effect in Pt/CuOx/Si/Pt devices prepared by the rf sputtering technique at room temperature. Differently from other Cu-based metal filament switching systems, a gradual electroforming process, marked by a gradual increase of the device resistance and a gradual decrease of the device capacitance, was observed in the current-voltage and capacitance characteristics. After the gradual electroforming, the devices show a uniform memristive switching behavior. By Auger electron spectroscopy analysis, a model based on the thickness change of the SiOx layer at the CuOx/Si interface and Cu ion migration is proposed for the gradual electroforming and uniform memristive switching, respectively. This work should be meaningful for the preparation of forming-free and homogeneous memristive devices. |
| 资助信息 | National Basic Research of China; National Natural Science Foundation of China; Knowledge Innovation Project of the CAS; Alexander von Humboldt Foundation; Institute of Basic Science [2012-0005847]; Korea government (MEST) |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57048]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wei, LL,Shang, DS,Sun, JR,et al. Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems[J]. NANOTECHNOLOGY,2013,24(32). |
| APA | Wei, LL,Shang, DS,Sun, JR,Lee, SB,Sun, ZG,&Shen, BG.(2013).Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems.NANOTECHNOLOGY,24(32). |
| MLA | Wei, LL,et al."Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems".NANOTECHNOLOGY 24.32(2013). |
入库方式： OAI收割
来源：物理研究所
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