Growth and in situ high-pressure reflection high energy electron diffraction monitoring of oxide thin films
文献类型：期刊论文
| 作者 | Li, J ; Peng, W ; Chen, K ; Wang, P ; Chu, HF ; Chen, YF ; Zheng, DN |
| 刊名 | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
 |
| 出版日期 | 2013 |
| 卷号 | 56期号:12页码:2312 |
| 关键词 | RHEED oxide thin film pulsed laser deposition interface |
| ISSN号 | 1674-7348 |
| 通讯作者 | Li, J (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Interface and surface physics is an important sub-discipline within condensed matter physics in recent decades. Novel concepts like oxide-electronic device are prompted, and their performance and lifetime are highly dependent on the flatness and abruptness of the layer surfaces and interfaces. Reflection high-energy electron diffraction (RHEED), which is extremely sensitive to surface morphology, has proven to be a versatile technique for the growth study of oxide thin films. A differential pumping unit enables an implementation of RHEED to pulsed laser deposition (PLD) systems, ensuring an in situ monitoring of the film growth process in a conventional PLD working oxygen pressure up to 30 Pa. By optimizing the deposition conditions and analyzing the RHEED intensity oscillations, layer-by-layer growth mode can be attained. Thus atomic control of the film surface and unit-cell control of the film thickness become reality. This may lead to an advanced miniaturization in the oxide electronics, and more importantly the discovery of a range of emergent physical properties at the interfaces. Herein we will briefly introduce the principle of high-pressure RHEED and summarize our main results relevant to the effort toward this objective, including the growth and characterization of twinned La2/3Ca1/3MnO3 thin films and ReTiO3+delta/2 (Re = La, Nd; delta = 0 similar to 1) A(n)B(n)O(3n+2) structures, on YSZ-buffered 'Silicon on Insulator' and LaAlO3 substrates, respectively, as well as the study of the initial structure and growth dynamics of YBa2Cu3O7-delta thin films on SrTiO3 substrate. Presently we have realized in situ monitoring and growth mode control during oxide thin film deposition process. |
| 资助信息 | National Natural Science Foundation of China [10974229, 11174342] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57055]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, J,Peng, W,Chen, K,et al. Growth and in situ high-pressure reflection high energy electron diffraction monitoring of oxide thin films[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2013,56(12):2312. |
| APA | Li, J.,Peng, W.,Chen, K.,Wang, P.,Chu, HF.,...&Zheng, DN.(2013).Growth and in situ high-pressure reflection high energy electron diffraction monitoring of oxide thin films.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,56(12),2312. |
| MLA | Li, J,et al."Growth and in situ high-pressure reflection high energy electron diffraction monitoring of oxide thin films".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 56.12(2013):2312. |
入库方式： OAI收割
来源：物理研究所
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