Growth of nano- and microcrystalline silicon thin films at low temperature by pulsed electron deposition
文献类型：期刊论文
| 作者 | Lu, NP ; Liao, LG ; Zhang, WB ; Yu, TX ; Ji, AL ; Cao, ZX |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2013 |
| 卷号 | 375页码:67 |
| 关键词 | Silicon thin film Pulsed electron deposition Crystallinity Low temperature |
| ISSN号 | 0022-0248 |
| 通讯作者 | Ji, AL (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Nanocrystalline silicon thin films were grown by using pulsed electron deposition onto substrates held at room temperature, and a substrate temperature up to 300 degrees C can effectively improve the crystallinity of the deposits that they can be characterized as microcrystalline. Nanosized crystallites (<4 nm) are formed in the ablation product, and upon their own kinetic energy and the heating effect from substrate, they become merged with neighboring particles in the amorphous matrix, resulting in Si films of excellent crystallinity that the full-width-at-half-maximum for the characteristic Raman peak at 520 cm(-1) measures as small as 4.17 cm(-1). The optical band-gap of such deposits varies from 2.0 eV for the room temperature sample to 1.63 eV for the sample grown at 300 degrees C. With transmission electron microscopic images and selected area electron diffraction patterns the evolution of crystallinity for the deposits was revealed. These results demonstrate the feasibility of pulsed electron deposition for the controlled growth of nano- and microcrystalline silicon films at low temperature. (C) 2013 Elsevier B.V. All rights reserved. |
| 资助信息 | Chinese Academy of Sciences; National Natural Science Foundation of China [10974227, 51172272, 10904165]; National Basic Research Program of China [2009CB930801, 2012CB933002] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57057]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lu, NP,Liao, LG,Zhang, WB,et al. Growth of nano- and microcrystalline silicon thin films at low temperature by pulsed electron deposition[J]. JOURNAL OF CRYSTAL GROWTH,2013,375:67. |
| APA | Lu, NP,Liao, LG,Zhang, WB,Yu, TX,Ji, AL,&Cao, ZX.(2013).Growth of nano- and microcrystalline silicon thin films at low temperature by pulsed electron deposition.JOURNAL OF CRYSTAL GROWTH,375,67. |
| MLA | Lu, NP,et al."Growth of nano- and microcrystalline silicon thin films at low temperature by pulsed electron deposition".JOURNAL OF CRYSTAL GROWTH 375(2013):67. |
入库方式： OAI收割
来源：物理研究所
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