中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-mobility two-dimensional electron gases at oxide interfaces: Origin and opportunities

文献类型:期刊论文

作者Chen, YZ ; Pryds, N ; Sun, JR ; Shen, BG ; Linderoth, S
刊名CHINESE PHYSICS B
出版日期2013
卷号22期号:11
关键词oxide interfaces two-dimensional electron gas (2DEG) SrTiO3 oxygen vacancies
ISSN号1674-1056
通讯作者Chen, YZ (reprint author), Tech Univ Denmark, Dept Energy Convers & Storage, Riso Campus, DK-4000 Roskilde, Denmark.
中文摘要Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas (2DEG) at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO(3) has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel gamma-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm(2).V-1.s(-1), more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.
语种英语
公开日期2014-01-16
源URL[http://ir.iphy.ac.cn/handle/311004/57079]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
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GB/T 7714
Chen, YZ,Pryds, N,Sun, JR,et al. High-mobility two-dimensional electron gases at oxide interfaces: Origin and opportunities[J]. CHINESE PHYSICS B,2013,22(11).
APA Chen, YZ,Pryds, N,Sun, JR,Shen, BG,&Linderoth, S.(2013).High-mobility two-dimensional electron gases at oxide interfaces: Origin and opportunities.CHINESE PHYSICS B,22(11).
MLA Chen, YZ,et al."High-mobility two-dimensional electron gases at oxide interfaces: Origin and opportunities".CHINESE PHYSICS B 22.11(2013).

入库方式: OAI收割

来源:物理研究所

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