High-mobility two-dimensional electron gases at oxide interfaces: Origin and opportunities
文献类型:期刊论文
作者 | Chen, YZ ; Pryds, N ; Sun, JR ; Shen, BG ; Linderoth, S |
刊名 | CHINESE PHYSICS B
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出版日期 | 2013 |
卷号 | 22期号:11 |
关键词 | oxide interfaces two-dimensional electron gas (2DEG) SrTiO3 oxygen vacancies |
ISSN号 | 1674-1056 |
通讯作者 | Chen, YZ (reprint author), Tech Univ Denmark, Dept Energy Convers & Storage, Riso Campus, DK-4000 Roskilde, Denmark. |
中文摘要 | Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas (2DEG) at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO(3) has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel gamma-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm(2).V-1.s(-1), more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides. |
语种 | 英语 |
公开日期 | 2014-01-16 |
源URL | [http://ir.iphy.ac.cn/handle/311004/57079] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Chen, YZ,Pryds, N,Sun, JR,et al. High-mobility two-dimensional electron gases at oxide interfaces: Origin and opportunities[J]. CHINESE PHYSICS B,2013,22(11). |
APA | Chen, YZ,Pryds, N,Sun, JR,Shen, BG,&Linderoth, S.(2013).High-mobility two-dimensional electron gases at oxide interfaces: Origin and opportunities.CHINESE PHYSICS B,22(11). |
MLA | Chen, YZ,et al."High-mobility two-dimensional electron gases at oxide interfaces: Origin and opportunities".CHINESE PHYSICS B 22.11(2013). |
入库方式: OAI收割
来源:物理研究所
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