In situ electron holography study of charge distribution in high-kappa charge-trapping memory
文献类型:期刊论文
作者 | Yao, Y ; Li, C ; Huo, ZL ; Liu, M ; Zhu, CX ; Gu, CZ ; Duan, XF ; Wang, YG ; Gu, L ; Yu, RC |
刊名 | NATURE COMMUNICATIONS
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出版日期 | 2013 |
卷号 | 4 |
ISSN号 | 2041-1723 |
通讯作者 | Yao, Y (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
中文摘要 | Charge-trapping memory with high-kappa insulator films is a candidate for future memory devices. Many efforts with different indirect methods have been made to confirm the trapping position of the charges, but the reported results in the literatures are contrary, from the bottom to the top of the trapping layers. Here we characterize the local charge distribution in the high-kappa dielectric stacks under different bias with in situ electron holography. The retrieved phase change induced by external bias strength is visualized with high spatial resolution and the negative charges aggregated on the interface between Al2O3 block layer and HfO2 trapping layer are confirmed. Moreover, the positive charges are discovered near the interface between HfO2 and SiO2 films, which may have an impact on the performance of the charge-trapping memory but were neglected in previous models and theory. |
资助信息 | State Key Development Program for Basic Research of China [2010CB934202, 2012CB932302, 2013CB932904]; National Natural Science Foundation of China [10974235, 11274365] |
语种 | 英语 |
公开日期 | 2014-01-16 |
源URL | [http://ir.iphy.ac.cn/handle/311004/57102] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Yao, Y,Li, C,Huo, ZL,et al. In situ electron holography study of charge distribution in high-kappa charge-trapping memory[J]. NATURE COMMUNICATIONS,2013,4. |
APA | Yao, Y.,Li, C.,Huo, ZL.,Liu, M.,Zhu, CX.,...&Yu, RC.(2013).In situ electron holography study of charge distribution in high-kappa charge-trapping memory.NATURE COMMUNICATIONS,4. |
MLA | Yao, Y,et al."In situ electron holography study of charge distribution in high-kappa charge-trapping memory".NATURE COMMUNICATIONS 4(2013). |
入库方式: OAI收割
来源:物理研究所
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