In situ RHEED analysis of epitaxial Gd2O3 thin films grown on Si (001)
文献类型：期刊论文
| 作者 | Xiang, WF ; Ni, H ; Lu, HB |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2013 |
| 卷号 | 110期号:2页码:423 |
| ISSN号 | 0947-8396 |
| 通讯作者 | Xiang, WF (reprint author), China Univ Petr, State Key Lab Heavy Oil Proc, Beijing 102249, Peoples R China. |
| 中文摘要 | Epitaxial Gd2O3 thin films were successfully grown on Si (001) substrates using a two-step approach by laser molecular-beam epitaxy. At the first step, a similar to 0.8 nm thin layer was deposited at the temperature of 200 C-a similar to as the buffer layer. Then the substrate temperature was increased to 650 C-a similar to and in situ annealing for 5 min, and a second Gd2O3 layer with a desired thickness was deposited. The whole growth process is monitored by in situ reflection high-energy electron diffraction (RHEED). In situ RHEED analysis of the growing film has revealed that the first Gd2O3 layer deposition and in situ annealing are the critical processes for the epitaxial growth of Gd2O3 film. The Gd2O3 film has a monoclinic phase characterized by X-ray diffraction. The high-resolution transmission electron microscopy image showed all the Gd2O3 layers have a little bending because of the stress. In addition, a 5-6 nm amorphous interfacial layer between the Gd2O3 film and Si substrate is due to the in situ high temperature annealing for a long time. The successful Gd2O3/Si epitaxial growth predicted a possibility to develop the new functional microelectronics devices. |
| 资助信息 | National Nature Science Foundation of China [11004251]; Basic Foundation of China University of Petroleum (Beijing) [01JB0007]; Development Foundation of China University of Petroleum (Beijing) [01JB0021] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57104]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xiang, WF,Ni, H,Lu, HB. In situ RHEED analysis of epitaxial Gd2O3 thin films grown on Si (001)[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2013,110(2):423. |
| APA | Xiang, WF,Ni, H,&Lu, HB.(2013).In situ RHEED analysis of epitaxial Gd2O3 thin films grown on Si (001).APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,110(2),423. |
| MLA | Xiang, WF,et al."In situ RHEED analysis of epitaxial Gd2O3 thin films grown on Si (001)".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 110.2(2013):423. |
入库方式： OAI收割
来源：物理研究所
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