Influence of Si doping on the structural and optical properties of InGaN epilayers
文献类型：期刊论文
| 作者 | Lu, PY ; Ma, ZG ; Su, SC ; Zhang, L ; Chen, H ; Jia, HQ ; Jiang, Y ; Qian, WN ; Wang, G ; Lu, TP ; He, M |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2013 |
| 卷号 | 22期号:10 |
| 关键词 | Si doping InGaN V-shaped defect |
| ISSN号 | 1674-1056 |
| 通讯作者 | Chen, H (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter, Beijing 100080, Peoples R China. |
| 中文摘要 | Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction (HRXRD), photolumimescence (PL), scanning electron microscope (SEM), and atomic force microscopy (AFM). It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing the formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN. |
| 资助信息 | National High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106, 2013AA03A101]; National Natural Science Foundation of China [11204360, 61210014, 61078046]; Science & Technology Innovation Program of Department of Education of Guangdong Province, China [2012CXZD0017]; Industry-Academia Research Union Special Fund of Guangdong Province, China [2012B091000169]; Science & Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund, China [2012B090600038] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57113]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lu, PY,Ma, ZG,Su, SC,et al. Influence of Si doping on the structural and optical properties of InGaN epilayers[J]. CHINESE PHYSICS B,2013,22(10). |
| APA | Lu, PY.,Ma, ZG.,Su, SC.,Zhang, L.,Chen, H.,...&He, M.(2013).Influence of Si doping on the structural and optical properties of InGaN epilayers.CHINESE PHYSICS B,22(10). |
| MLA | Lu, PY,et al."Influence of Si doping on the structural and optical properties of InGaN epilayers".CHINESE PHYSICS B 22.10(2013). |
入库方式： OAI收割
来源：物理研究所
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