Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
文献类型：期刊论文
| 作者 | Yu, YX ; Lin, ZJ ; Luan, CB ; Lv, YJ ; Feng, ZH ; Yang, M ; Wang, YT ; Chen, H |
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2013 |
| 卷号 | 3期号:9 |
| ISSN号 | 2158-3226 |
| 通讯作者 | Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. |
| 中文摘要 | Using the Quasi-Two-Dimensional (quasi-2D) model, the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate length were simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzing the simulation results, we found that the different polarization charge distribution generated by the different channel electric field distribution can result in different polarization Coulomb field scattering, and the difference of the electron mobility mostly caused by the polarization Coulomb field scattering can reach up to 1829.9 cm(2)/V . s for the prepared AlGaN/AlN/GaN HFET. In addition, it was also found that when the two-dimension electron gas (2DEG) sheet density is modulated by the drain-source bias, the electron mobility appears peak with the variation of the 2DEG sheet density, and the ratio of gate length to drain-source distance is smaller, the 2DEG sheet density corresponding to the peak point is higher. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. |
| 资助信息 | National Natural Science Foundation of China [11174182]; Specialized Research Fund for the Doctoral Program of Higher Education [20110131110005] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57114]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, YX,Lin, ZJ,Luan, CB,et al. Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. AIP ADVANCES,2013,3(9). |
| APA | Yu, YX.,Lin, ZJ.,Luan, CB.,Lv, YJ.,Feng, ZH.,...&Chen, H.(2013).Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors.AIP ADVANCES,3(9). |
| MLA | Yu, YX,et al."Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors".AIP ADVANCES 3.9(2013). |
入库方式： OAI收割
来源：物理研究所
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