Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates
文献类型：期刊论文
| 作者 | Huang, L ; Xu, WY ; Que, YD ; Mao, JH ; Meng, L ; Pan, LD ; Li, G ; Wang, YL ; Du, SX ; Liu, YQ ; Gao, HJ |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2013 |
| 卷号 | 22期号:9 |
| 关键词 | graphene metal intercalation silicon intercalation scanning tunneling microscopy |
| ISSN号 | 1674-1056 |
| 通讯作者 | Gao, HJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercalation, seven different metals have been successfully intercalated at the interface of graphene/Ru(0001) and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru(0001) and on Ir(111), have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications. |
| 资助信息 | National Basic Research Program of China [2013CBA01600, 2011CB932700, 2009CB929103, 2010CB923004]; National Natural Science Foundation of China; Chinese Acedemy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57129]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang, L,Xu, WY,Que, YD,et al. Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates[J]. CHINESE PHYSICS B,2013,22(9). |
| APA | Huang, L.,Xu, WY.,Que, YD.,Mao, JH.,Meng, L.,...&Gao, HJ.(2013).Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates.CHINESE PHYSICS B,22(9). |
| MLA | Huang, L,et al."Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates".CHINESE PHYSICS B 22.9(2013). |
入库方式： OAI收割
来源：物理研究所
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