Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-mu m mid-wavelength infrared detection
文献类型：期刊论文
| 作者 | Shi, ZW ; Wang, L ; Zhen, HL ; Wang, WX ; Chen, H |
| 刊名 | NANOSCALE RESEARCH LETTERS
 |
| 出版日期 | 2013 |
| 卷号 | 8 |
| 关键词 | Molecular beam epitaxy Quantum well infrared detector InGaAs/AlGaAs quantum well |
| ISSN号 | 1931-7573 |
| 通讯作者 | Wang, L (reprint author), Chinese Acad Sci, Inst Phys, Beijing Key Lab New Energy Mat & Devices, Key Lab Renewable Energy,Natl Lab Condensed Matte, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | InGaAs/AlGaAs multiple quantum wells used for 4.3 mu m mid-wavelength infrared quantum well infrared detectors were grown by molecular beam epitaxy. In composition loss was observed and quantitatively studied by high-resolution X-ray diffraction technology. By this In composition loss effect, the energy band engineering on the photo-response wavelength is not easily achieved. A thin AlGaAs barrier grown at low temperature is used to suppress the In atom desorption, and this growth process was verified to be able to adjust the photo-response wavelength as designed by energy band engineering in the photocurrent spectrum. |
| 资助信息 | Natural Science Foundation of China [61106013, 61275107]; National High Technology Research and Development Program of China [2009AA033101, 2013AA031903]; National Basic Research Program of China [2010-CB327501, 2011CB925604] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57228]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shi, ZW,Wang, L,Zhen, HL,et al. Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-mu m mid-wavelength infrared detection[J]. NANOSCALE RESEARCH LETTERS,2013,8. |
| APA | Shi, ZW,Wang, L,Zhen, HL,Wang, WX,&Chen, H.(2013).Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-mu m mid-wavelength infrared detection.NANOSCALE RESEARCH LETTERS,8. |
| MLA | Shi, ZW,et al."Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-mu m mid-wavelength infrared detection".NANOSCALE RESEARCH LETTERS 8(2013). |
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来源：物理研究所
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