中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Parallel field magnetoresistance in topological insulator thin films

文献类型:期刊论文

作者Lin, CJ ; He, XY ; Liao, J ; Wang, XX ; Sacksteder, V ; Yang, WM ; Guan, T ; Zhang, QM ; Gu, L ; Zhang, GY ; Zeng, CG ; Dai, X ; Wu, KH ; Li, YQ
刊名PHYSICAL REVIEW B
出版日期2013
卷号88期号:4
ISSN号1098-0121
通讯作者Lin, CJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi2Se3 and (Bi1-xSbx)(2)Te-3 thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the TI thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The beta parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials.
资助信息National Basic Research Program of China [2012CB921703, 2009CB929101]; National Science Foundation of China [91121003]; Chinese Academy of Sciences
语种英语
公开日期2014-01-16
源URL[http://ir.iphy.ac.cn/handle/311004/57316]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Lin, CJ,He, XY,Liao, J,et al. Parallel field magnetoresistance in topological insulator thin films[J]. PHYSICAL REVIEW B,2013,88(4).
APA Lin, CJ.,He, XY.,Liao, J.,Wang, XX.,Sacksteder, V.,...&Li, YQ.(2013).Parallel field magnetoresistance in topological insulator thin films.PHYSICAL REVIEW B,88(4).
MLA Lin, CJ,et al."Parallel field magnetoresistance in topological insulator thin films".PHYSICAL REVIEW B 88.4(2013).

入库方式: OAI收割

来源:物理研究所

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