Parallel field magnetoresistance in topological insulator thin films
文献类型：期刊论文
| 作者 | Lin, CJ ; He, XY ; Liao, J ; Wang, XX ; Sacksteder, V ; Yang, WM ; Guan, T ; Zhang, QM ; Gu, L ; Zhang, GY ; Zeng, CG ; Dai, X ; Wu, KH ; Li, YQ |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2013 |
| 卷号 | 88期号:4 |
| ISSN号 | 1098-0121 |
| 通讯作者 | Lin, CJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi2Se3 and (Bi1-xSbx)(2)Te-3 thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the TI thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The beta parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials. |
| 资助信息 | National Basic Research Program of China [2012CB921703, 2009CB929101]; National Science Foundation of China [91121003]; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57316]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lin, CJ,He, XY,Liao, J,et al. Parallel field magnetoresistance in topological insulator thin films[J]. PHYSICAL REVIEW B,2013,88(4). |
| APA | Lin, CJ.,He, XY.,Liao, J.,Wang, XX.,Sacksteder, V.,...&Li, YQ.(2013).Parallel field magnetoresistance in topological insulator thin films.PHYSICAL REVIEW B,88(4). |
| MLA | Lin, CJ,et al."Parallel field magnetoresistance in topological insulator thin films".PHYSICAL REVIEW B 88.4(2013). |
入库方式： OAI收割
来源：物理研究所
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