中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Realization of W-MgZnO epitaxial growth on BeO-buffered ZnO for UV-B photodetectors

文献类型:期刊论文

作者Liang, HL ; Mei, ZX ; Hou, YN ; Liang, S ; Liu, ZL ; Liu, YP ; Li, JQ ; Du, XL
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2013
卷号381页码:6
关键词MBE Photodetector BeO UV-B W-MgZnO
ISSN号0022-0248
通讯作者Mei, ZX (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要A single-phase wurtzite MgZnO film with an optical band gap of 294.5 nm was synthesized on ZnO substrate by molecular beam epitaxy, and a photodetector was fabricated working in the ultraviolet-B spectrum region. Wurtzite BeO was adopted to restrain the substrate response as an insulating layer and provide an excellent epitaxial template for high-Mg-content MgZnO growth. In situ reflection high-energy electron diffraction observations, ex situ X-ray diffraction and reflectance spectrum indicate the achievement of high-quality single-phase wurtzite MgZnO with smooth surface and deep ultraviolet band gap. The BeO layer efficiently suppresses the photoresponse from the substrate, as the photo-detector demonstrates a sharp cutoff at 290 nm, consistent with the optical band gap. (C) 2013 Elsevier B.V. All rights reserved.
资助信息National Science Foundation [61076007, 11174348, 51272280, 11274366, 61204067]; Ministry of Science and Technology of China [2009CB929404, 2011CB302002, 2011CB302006]; Chinese Academy of Sciences
语种英语
公开日期2014-01-16
源URL[http://ir.iphy.ac.cn/handle/311004/57383]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Liang, HL,Mei, ZX,Hou, YN,et al. Realization of W-MgZnO epitaxial growth on BeO-buffered ZnO for UV-B photodetectors[J]. JOURNAL OF CRYSTAL GROWTH,2013,381:6.
APA Liang, HL.,Mei, ZX.,Hou, YN.,Liang, S.,Liu, ZL.,...&Du, XL.(2013).Realization of W-MgZnO epitaxial growth on BeO-buffered ZnO for UV-B photodetectors.JOURNAL OF CRYSTAL GROWTH,381,6.
MLA Liang, HL,et al."Realization of W-MgZnO epitaxial growth on BeO-buffered ZnO for UV-B photodetectors".JOURNAL OF CRYSTAL GROWTH 381(2013):6.

入库方式: OAI收割

来源:物理研究所

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