Recent development of studies on the mechanism of resistive memories in several metal oxides
文献类型：期刊论文
| 作者 | Tian, XZ ; Wang, LF ; Li, XM ; Wei, JK ; Yang, SZ ; Xu, Z ; Wang, WL ; Bai, XD |
| 刊名 | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
 |
| 出版日期 | 2013 |
| 卷号 | 56期号:12页码:2361 |
| 关键词 | resistive switching effect valence change memory electrode engineering in-situ TEM |
| ISSN号 | 1674-7348 |
| 通讯作者 | Bai, XD (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Resistive switching random access memories (RRAM) have been considered to be promising for future information technology with applications for non-volatile memory, logic circuits and neuromorphic computing. Key performances of those resistive devices are approaching the realistic levels for production. In this paper, we review the progress of valence change type memories, including relevant work reported by our group. Both electrode engineering and in-situ transmission electron microscopy (TEM) high-resolution observation have been implemented to reveal the influence of migration of oxygen anions/vacancies on the resistive switching effect. The understanding of resistive memory mechanism is significantly important for device applications. |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57385]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Tian, XZ,Wang, LF,Li, XM,et al. Recent development of studies on the mechanism of resistive memories in several metal oxides[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2013,56(12):2361. |
| APA | Tian, XZ.,Wang, LF.,Li, XM.,Wei, JK.,Yang, SZ.,...&Bai, XD.(2013).Recent development of studies on the mechanism of resistive memories in several metal oxides.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,56(12),2361. |
| MLA | Tian, XZ,et al."Recent development of studies on the mechanism of resistive memories in several metal oxides".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 56.12(2013):2361. |
入库方式： OAI收割
来源：物理研究所
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