中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES

文献类型:期刊论文

作者Jin, YL ; Jin, KJ ; Ge, C ; Lu, HB ; Yang, GZ
刊名MODERN PHYSICS LETTERS B
出版日期2013
卷号27期号:29
关键词Resistive switching effect perovskite oxide oxygen vacancies ferroelectric diodes self-consistent calculation
ISSN号0217-9849
通讯作者Jin, KJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The important role of the ferroelectric polarization was also carefully confirmed by analyzing the relationship between the current-voltage and polarization-voltage loops in the ferroelectric oxide heterostructures. The physical mechanisms have been revealed based on the developed numerical model.
资助信息National Basic Research Program of China [2012CB921403, 2013CB328706]; National Natural Science Foundation of China [10825418, 11134012]
语种英语
公开日期2014-01-16
源URL[http://ir.iphy.ac.cn/handle/311004/57398]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Jin, YL,Jin, KJ,Ge, C,et al. RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES[J]. MODERN PHYSICS LETTERS B,2013,27(29).
APA Jin, YL,Jin, KJ,Ge, C,Lu, HB,&Yang, GZ.(2013).RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES.MODERN PHYSICS LETTERS B,27(29).
MLA Jin, YL,et al."RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES".MODERN PHYSICS LETTERS B 27.29(2013).

入库方式: OAI收割

来源:物理研究所

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