RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES
文献类型:期刊论文
作者 | Jin, YL ; Jin, KJ ; Ge, C ; Lu, HB ; Yang, GZ |
刊名 | MODERN PHYSICS LETTERS B
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出版日期 | 2013 |
卷号 | 27期号:29 |
关键词 | Resistive switching effect perovskite oxide oxygen vacancies ferroelectric diodes self-consistent calculation |
ISSN号 | 0217-9849 |
通讯作者 | Jin, KJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
中文摘要 | Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The important role of the ferroelectric polarization was also carefully confirmed by analyzing the relationship between the current-voltage and polarization-voltage loops in the ferroelectric oxide heterostructures. The physical mechanisms have been revealed based on the developed numerical model. |
资助信息 | National Basic Research Program of China [2012CB921403, 2013CB328706]; National Natural Science Foundation of China [10825418, 11134012] |
语种 | 英语 |
公开日期 | 2014-01-16 |
源URL | [http://ir.iphy.ac.cn/handle/311004/57398] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Jin, YL,Jin, KJ,Ge, C,et al. RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES[J]. MODERN PHYSICS LETTERS B,2013,27(29). |
APA | Jin, YL,Jin, KJ,Ge, C,Lu, HB,&Yang, GZ.(2013).RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES.MODERN PHYSICS LETTERS B,27(29). |
MLA | Jin, YL,et al."RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES".MODERN PHYSICS LETTERS B 27.29(2013). |
入库方式: OAI收割
来源:物理研究所
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