Resolving exciton diffusion in InGaAs quantum wells using micro-photoluminescence mapping with a lateral excitation
文献类型：期刊论文
| 作者 | Cao, S ; Ji, XF ; Qiu, KS ; Gao, YN ; Zhao, YH ; Tang, J ; Xu, Z ; Jin, KJ ; Xu, XL |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2013 |
| 卷号 | 28期号:12 |
| ISSN号 | 0268-1242 |
| 通讯作者 | Cao, S (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We report a spatially resolved photoluminescence mapping of InGaAs quantum wells. The photoluminescence was collected on top of the quantum well, with a HeNe laser pumping horizontally or vertically. In the horizontal configuration, at temperature of 68 K, the spectral linewidth narrows from 2.8 to 2.2 meV with the peak shifting from 1.4425 to 1.4415 eV, while at 3.8 K these changes were not observed. This demonstrates that photo-generated carriers can diffuse away from the laser spot and relax to the lower energy states in the case when the charge carriers are thermally activated. The spectra narrowing in the vertical configuration, which could not be observed, is due to the fact that the emitted light was always collected from the same spot of the pumping laser without diffusion. |
| 资助信息 | National Basic Research Program of China [2013CB328 706, 2012CB921403]; National Natural Science Foundation of China [11 174 356, 61 275 060, 11 134 012]; Hundred Talents Program of the Chinese Academy of Sciences; 973 Program [2010CB327 704]; NSFC [51 272 022]; NCET [NCET-10-0220]; RFDP [20 120 009 130 005]; FRFCU [2012JBZ001] |
| 语种 | 英语 |
| 公开日期 | 2014-01-16 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57399]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cao, S,Ji, XF,Qiu, KS,et al. Resolving exciton diffusion in InGaAs quantum wells using micro-photoluminescence mapping with a lateral excitation[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2013,28(12). |
| APA | Cao, S.,Ji, XF.,Qiu, KS.,Gao, YN.,Zhao, YH.,...&Xu, XL.(2013).Resolving exciton diffusion in InGaAs quantum wells using micro-photoluminescence mapping with a lateral excitation.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,28(12). |
| MLA | Cao, S,et al."Resolving exciton diffusion in InGaAs quantum wells using micro-photoluminescence mapping with a lateral excitation".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28.12(2013). |
入库方式： OAI收割
来源：物理研究所
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