Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment
文献类型：期刊论文
| 作者 | Li, H ; Cui, YX ; Wu, KY ; Tseng, WK ; Cheng, HH ; Chen, H |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2013 |
| 卷号 | 102期号:25 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Cheng, HH (reprint author), Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan. |
| 中文摘要 | We report the effects of thermal annealing on the characteristics of GeSn epilayers grown on Ge-buffered Si wafers with a high Sn content near a threshold value that affords a direct bandgap. On annealing at temperatures below 400 degrees C, the characteristics of the epilayer remain unchanged, compared to those of the as-grown samples. On annealing the samples at a temperature in the range of 440-540 degrees C, strain relaxation in the epilayer is observed, accompanied by generation of misfit dislocations at the GeSn/Ge interface. A further increase in annealing temperature beyond 580 degrees C causes not only a relaxation in strain but also a change in the microstructure of the epilayer. In addition, Sn forms clusters and segregates to the surface, resulting in a reduction in the Sn content of the epilayer. The present investigation shows changes in the characteristics of the film under thermal treatment, providing an insight into the physical properties of such devices. (C) 2013 AIP Publishing LLC. |
| 资助信息 | National Science Council of the Republic of China [101-2112-M-002-015-MY3]; U.S. Air Force Office of Scientific Research [FA2386-13-1-4092] |
| 语种 | 英语 |
| 公开日期 | 2014-01-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57474]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, H,Cui, YX,Wu, KY,et al. Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment[J]. APPLIED PHYSICS LETTERS,2013,102(25). |
| APA | Li, H,Cui, YX,Wu, KY,Tseng, WK,Cheng, HH,&Chen, H.(2013).Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment.APPLIED PHYSICS LETTERS,102(25). |
| MLA | Li, H,et al."Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment".APPLIED PHYSICS LETTERS 102.25(2013). |
入库方式： OAI收割
来源：物理研究所
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