Strain-induced Dirac cone-like electronic structures and semiconductor-semimetal transition in graphdiyne
文献类型：期刊论文
| 作者 | Cui, HJ ; Sheng, XL ; Yan, QB ; Zheng, QR ; Su, G |
| 刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
 |
| 出版日期 | 2013 |
| 卷号 | 15期号:21页码:8179 |
| ISSN号 | 1463-9076 |
| 通讯作者 | Su, G (reprint author), Univ Chinese Acad Sci, Sch Phys, POB 4588, Beijing 100049, Peoples R China. |
| 中文摘要 | By means of first-principles calculations combined with the tight-binding approximation, the strain-induced semiconductor-semimetal transition in graphdiyne is discovered. It is shown that the band gap of graphdiyne increases from 0.47 eV to 1.39 eV with increasing the biaxial tensile strain, while the band gap decreases from 0.47 eV to nearly zero with increasing the uniaxial tensile strain, and Dirac cone-like electronic structures are observed. The uniaxial strain-induced changes of the electronic structures of graphdiyne come from the breaking of geometrical symmetry that lifts the degeneracy of energy bands. The properties of graphdiyne under strains are found to differ remarkably from that of graphene. |
| 资助信息 | NSFC [90922033, 10934008, 10974253, 11004239]; MOST of China [2012CB932900, 2013CB933401]; CAS |
| 语种 | 英语 |
| 公开日期 | 2014-01-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57477]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cui, HJ,Sheng, XL,Yan, QB,et al. Strain-induced Dirac cone-like electronic structures and semiconductor-semimetal transition in graphdiyne[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2013,15(21):8179. |
| APA | Cui, HJ,Sheng, XL,Yan, QB,Zheng, QR,&Su, G.(2013).Strain-induced Dirac cone-like electronic structures and semiconductor-semimetal transition in graphdiyne.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,15(21),8179. |
| MLA | Cui, HJ,et al."Strain-induced Dirac cone-like electronic structures and semiconductor-semimetal transition in graphdiyne".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 15.21(2013):8179. |
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来源：物理研究所
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