Terahertz emission from semi-insulating GaAs with octadecanthiol-passivated surface
文献类型：期刊论文
| 作者 | Wu, XJ ; Xu, XL ; Lu, XC ; Wang, L |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2013 |
| 卷号 | 279页码:92 |
| 关键词 | THz emission Semiconductor surface Surface passivation |
| ISSN号 | 0169-4332 |
| 通讯作者 | Xu, XL (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Terahertz (THz) emission from octadecanthiol (ODT) passivated (100) surface of the semi-insulating GaAs was measured, and compared with those from the native oxidized and the fresh surfaces. It was shown that the self-assembled ODT monolayer can stabilize the GaAs (100) surface, and maintain a THz surface emission 1.4 times as efficient as the native oxidized surface under equal conditions. Surface passivation can reduce the built-in electric field in the depletion region of the GaAs (100), resulting in the suppression of the THz radiation to a different extent. Oxidation of GaAs surface reduces the THz amplitude mainly in the low-frequency region. These results indicate that GaAs can be made a more effective THz source by choosing molecular passivation technique. Conversely, the THz emission features such as polarity, amplitude, and phase from molecule-passivated surfaces may be used to characterize the attached molecules. (C) 2013 Elsevier B.V. All rights reserved. |
| 资助信息 | National Natural Science Foundation of China [10834015, 61077082]; Natural Science Basic Research Plan in Shaanxi Province of China [2012KJXX-27]; open foundation of State Key Lab Incubation Base of Photoelectric Technology and Functional Materials [ZS12018] |
| 语种 | 英语 |
| 公开日期 | 2014-01-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57558]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, XJ,Xu, XL,Lu, XC,et al. Terahertz emission from semi-insulating GaAs with octadecanthiol-passivated surface[J]. APPLIED SURFACE SCIENCE,2013,279:92. |
| APA | Wu, XJ,Xu, XL,Lu, XC,&Wang, L.(2013).Terahertz emission from semi-insulating GaAs with octadecanthiol-passivated surface.APPLIED SURFACE SCIENCE,279,92. |
| MLA | Wu, XJ,et al."Terahertz emission from semi-insulating GaAs with octadecanthiol-passivated surface".APPLIED SURFACE SCIENCE 279(2013):92. |
入库方式： OAI收割
来源：物理研究所
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