The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD
文献类型：期刊论文
| 作者 | Xu, PQ ; Jiang, Y ; Ma, ZG ; Deng, Z ; Lu, TP ; Du, CH ; Fang, YT ; Zuo, P ; Chen, H |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2013 |
| 卷号 | 30期号:2 |
| ISSN号 | 0256-307X |
| 通讯作者 | Jiang, Y (reprint author), Chinese Acad Sci, Inst Phys, Key Lab Renewable Energy, Beijing 100190, Peoples R China. |
| 中文摘要 | GaN films with different thicknesses of Al composition graded AlGaN buffer are grown on substrates of Si(111) by metal-organic chemical vapor deposition (MOCVD). The thicknesses of graded AlGaN buffer are fixed at 200 nm, 300 nm, and 450 nm, respectively. Optical microscopy, atomic force microscopy, x-ray diffraction, and Raman spectroscopy are employed to characterize these samples. We find that the thickness of the graded AlGaN buffer layer plays a key role on the following growth of GaN films. The optimized thickness of the graded AlGaN buffer layer is 300 nm. Under such conditions, the GaN epitaxial film is crack-free, and its dislocation density is the lowest. |
| 资助信息 | National High-Technology Research and Development Program of China [2011AA03A112, 2011AA03A106]; National Natural Science Foundation of China [60890192, 50872146, 60877006] |
| 语种 | 英语 |
| 公开日期 | 2014-01-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57572]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, PQ,Jiang, Y,Ma, ZG,et al. The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD[J]. CHINESE PHYSICS LETTERS,2013,30(2). |
| APA | Xu, PQ.,Jiang, Y.,Ma, ZG.,Deng, Z.,Lu, TP.,...&Chen, H.(2013).The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD.CHINESE PHYSICS LETTERS,30(2). |
| MLA | Xu, PQ,et al."The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD".CHINESE PHYSICS LETTERS 30.2(2013). |
入库方式： OAI收割
来源：物理研究所
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