Time-resolved photoluminescence from Si-in-SiNx/Si-in-SiC quantum well-dot structures
文献类型：期刊论文
| 作者 | Huang, R ; Du, Y ; Ji, AL ; Cao, ZX |
| 刊名 | OPTICAL MATERIALS
 |
| 出版日期 | 2013 |
| 卷号 | 35期号:12页码:2414 |
| 关键词 | Time-resolved photoluminescence Si-in-SiNx/Si-in-SiC Si quantum dots PECVD |
| ISSN号 | 0925-3467 |
| 通讯作者 | Ji, AL (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Si-in-SiNx/Si-in-SiC quantum well-dot structures, with Si quantum dots slightly larger than 1.0 nm embedded in both amorphous SiNx and SiC sublayers, were grown at nearly room temperature by using PECVD. Time-resolved photoluminescence for three samples in a period of 100/30 nm, 60/10 nm and 20/10 nm, respectively, has been measured at emission lengths ranging from 430 nm to 490 nm, and fitted with a stretched-exponential function. Typical decay time was at the order of one nanosecond, which could be attributed to the core-state emission. The matrix materials forming the well provide a nonuniform potential background which induces a modulation to the carrier diffusion process, thus resulting in an emission-wavelength dependent decay time. When confinement effect from the well comes into play as in the sample of smaller well width, the decay time can be below 1.0 ns and indifferent to the varied emission wavelength, and the carrier diffusion is dominated by hopping. These quantum well-dot systems of strong and fast decaying light emission in blue-violet colors might find potential utilization in GHz optical connection and other photoelectronic devices. (C) 2013 Elsevier B.V. All rights reserved. |
| 资助信息 | Innovation Program of the Chinese Academy of Sciences; National Natural Science Foundation of China [10974227, 51172272, 10904165]; National Basic Research Program of China [2012CB933002] |
| 语种 | 英语 |
| 公开日期 | 2014-01-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57604]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang, R,Du, Y,Ji, AL,et al. Time-resolved photoluminescence from Si-in-SiNx/Si-in-SiC quantum well-dot structures[J]. OPTICAL MATERIALS,2013,35(12):2414. |
| APA | Huang, R,Du, Y,Ji, AL,&Cao, ZX.(2013).Time-resolved photoluminescence from Si-in-SiNx/Si-in-SiC quantum well-dot structures.OPTICAL MATERIALS,35(12),2414. |
| MLA | Huang, R,et al."Time-resolved photoluminescence from Si-in-SiNx/Si-in-SiC quantum well-dot structures".OPTICAL MATERIALS 35.12(2013):2414. |
入库方式： OAI收割
来源：物理研究所
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