Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells
文献类型：期刊论文
| 作者 | Sun, H ; Ji, ZW ; Wang, HN ; Xiao, HD ; Qu, S ; Xu, XG ; Jin, AZ ; Yang, HF |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2013 |
| 卷号 | 114期号:9 |
| ISSN号 | 0021-8979 |
| 通讯作者 | Ji, ZW (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. |
| 中文摘要 | Photoluminescence (PL) properties of InGaN/GaN multiple quantum wells are studied. Two InGaN-related peaks are observed in the full PL spectrum and are assigned to the quasi-quantum dots (QDs) (2.42 eV) and the InGaN matrix (2.66 eV), due to a strong phase separation. As the carriers transfer from the matrix down to the QDs, an increase of the QDs-related PL intensity (I-D) accompanied by the decrease of the matrix-related PL intensity (I-M) results. A slight increase of the total PL intensity is also observed, and is attributed to the QDs providing deep potential levels to suppress the outflow of carriers toward surrounding nonradiative centers. A piezoelectric field resulting from the high indium content inside the QDs is observed, which is speculated from Coulomb screening effect. Additionally, we find that the sublinear dependence of the I-D on excitation power (P) is due to the saturation of the QDs states, while the superlinear dependence of the I-M on P is simultaneously attributed to the suppression of the carriers transferring from the matrix to the QDs and the saturation of the nonradiative centers in the matrix. (C) 2013 AIP Publishing LLC. |
| 资助信息 | National Natural Science Foundation of China [10874101]; Specialized Research Fund for the Doctoral Program of Higher Education [20120131110006]; Key Science and technology program of Shandong province, China [2012GGX10228]; National Basic Research Program of China (973 Program) [2009CB930503] |
| 语种 | 英语 |
| 公开日期 | 2014-01-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57618]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sun, H,Ji, ZW,Wang, HN,et al. Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells[J]. JOURNAL OF APPLIED PHYSICS,2013,114(9). |
| APA | Sun, H.,Ji, ZW.,Wang, HN.,Xiao, HD.,Qu, S.,...&Yang, HF.(2013).Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells.JOURNAL OF APPLIED PHYSICS,114(9). |
| MLA | Sun, H,et al."Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells".JOURNAL OF APPLIED PHYSICS 114.9(2013). |
入库方式： OAI收割
来源：物理研究所
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