Transport properties of Sb2Te3/Bi2Te3 topological insulator heterostructures
文献类型：期刊论文
| 作者 | Zhang, ZC ; Feng, X ; Guo, MH ; Ou, YB ; Zhang, JS ; Li, K ; Wang, LL ; Chen, X ; Xue, QK ; Ma, XC ; He, K ; Wang, YY |
| 刊名 | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
 |
| 出版日期 | 2013 |
| 卷号 | 7期号:1-2页码:142 |
| 关键词 | topological insulators heterostructures surface states transport |
| ISSN号 | 1862-6254 |
| 通讯作者 | He, K (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We report transport studies on Sb2Te3/Bi2Te3 topological insulator heterostructures grown by molecular beam epitaxy. Two devices with different Sb2Te3 thickness are fabricated and investigated. Under certain gate voltage, the Hall resistance exhibits strongly nonlinear behaviour and changes sign with increasing magnetic field, indicating the coexistence of electron- and hole-type charge carriers on the opposite surfaces of the heterostructure. Gate-tuned magnetoresistance measurements reveal the same phenomenon. This work paves the road for realizing the proposed exotic quantum phenomena that require opposite polarity of the surface Dirac fermions in topological insulator based structures. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| 资助信息 | National Natural Science Foundation of China; MOST of China; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2014-01-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57623]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, ZC,Feng, X,Guo, MH,et al. Transport properties of Sb2Te3/Bi2Te3 topological insulator heterostructures[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2013,7(1-2):142. |
| APA | Zhang, ZC.,Feng, X.,Guo, MH.,Ou, YB.,Zhang, JS.,...&Wang, YY.(2013).Transport properties of Sb2Te3/Bi2Te3 topological insulator heterostructures.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,7(1-2),142. |
| MLA | Zhang, ZC,et al."Transport properties of Sb2Te3/Bi2Te3 topological insulator heterostructures".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 7.1-2(2013):142. |
入库方式： OAI收割
来源：物理研究所
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