Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures
文献类型：期刊论文
| 作者 | Jiang, XL ; Zhao, YG ; Zhang, X ; Zhu, MH ; Zhang, HY ; Shang, DS ; Sun, JR |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2013 |
| 卷号 | 102期号:23 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Jiang, XL (reprint author), Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China. |
| 中文摘要 | We studied the resistive switching (RS) effect in LaAlO3/Nb:SrTiO3 heterostructures at different temperatures with AC impedance technique in addition to the conventional I-V measurements. It was demonstrated that the bipolar RS effect originates from LaAlO3/Nb:SrTiO3 interface and the resistance and capacitance states are controlled by the filling status of traps. A model based on the variation of trap state was proposed to explain the RS effect and the thermal history dependent electronic transport behavior. This work demonstrates the key role of trap state in the RS effect and electronic transport. (C) 2013 AIP Publishing LLC. |
| 资助信息 | National Science Foundation of China [11134007]; 973 projects of the Ministry of Science and Technology of China; Special Fund of Tsinghua for basic research [201110810625] |
| 语种 | 英语 |
| 公开日期 | 2014-01-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57624]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jiang, XL,Zhao, YG,Zhang, X,et al. Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures[J]. APPLIED PHYSICS LETTERS,2013,102(23). |
| APA | Jiang, XL.,Zhao, YG.,Zhang, X.,Zhu, MH.,Zhang, HY.,...&Sun, JR.(2013).Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures.APPLIED PHYSICS LETTERS,102(23). |
| MLA | Jiang, XL,et al."Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures".APPLIED PHYSICS LETTERS 102.23(2013). |
入库方式： OAI收割
来源：物理研究所
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