中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A novel wavelength-adjusting method in InGaN-based light-emitting diodes

文献类型:期刊论文

作者Deng, Zhen ; Jiang, Yang ; Ma, Ziguang ; Wang, Wenxin ; Jia, Haiqiang ; Zhou, Junming ; Chen, Hong
刊名SCIENTIFIC REPORTS
出版日期2013
卷号3
ISSN号2045-2322
中文摘要The pursuit of high internal quantum efficiency (IQE) for green emission spectral regime is referred as "green gap" challenge. Now researchers place their hope on the InGaN-based materials to develop high-brightness green light-emitting diodes. However, IQE drops fast when emission wavelength of InGaN LED increases by changing growth temperature or well thickness. In this paper, a new wavelength-adjusting method is proposed and the optical properties of LED are investigated. By additional process of indium pre-deposition before InGaN well layer growth, the indium distribution along growth direction becomes more uniform, which leads to the increase of average indium content in InGaN well layer and results in a redshift of peak-wavelength. We also find that the IQE of LED with indium pre-deposition increases with the wavelength redshift. Such dependence is opposite to the IQE-wavelength behavior in conventional InGaN LEDs. The relations among the IQE, wavelength and the indium pre-deposition process are discussed.
语种英语
公开日期2014-01-17
源URL[http://ir.iphy.ac.cn/handle/311004/57774]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Deng, Zhen,Jiang, Yang,Ma, Ziguang,et al. A novel wavelength-adjusting method in InGaN-based light-emitting diodes[J]. SCIENTIFIC REPORTS,2013,3.
APA Deng, Zhen.,Jiang, Yang.,Ma, Ziguang.,Wang, Wenxin.,Jia, Haiqiang.,...&Chen, Hong.(2013).A novel wavelength-adjusting method in InGaN-based light-emitting diodes.SCIENTIFIC REPORTS,3.
MLA Deng, Zhen,et al."A novel wavelength-adjusting method in InGaN-based light-emitting diodes".SCIENTIFIC REPORTS 3(2013).

入库方式: OAI收割

来源:物理研究所

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