Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer
文献类型：期刊论文
| 作者 | Li, D.L. ; Feng, J.F. ; Yu, G.Q. ; Guo, P. ; Chen, J.Y. ; Wei, H.X. ; Han, X.F. ; Coey, J.M.D. |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2013 |
| 卷号 | 114期号:21页码:213909 (5 pp.) |
| ISSN号 | 0021-8979 |
| 中文摘要 | Dynamic conductance dI/dV and inelastic electron tunneling spectroscopy (IETS) d 2I/dV 2 have been measured at different temperatures for double barrier magnetic tunnel junctions with a thin top MgO layer. The resistance in the antiparallel state exhibits a normal tunnel-like behavior, while the resistance in the parallel state shows metallic-like transport, indicating the presence of pinholes in the thin top MgO layer. Three IETS peaks are the zero-bias anomaly, interface magnons, and barrier phonons in both the parallel and antiparallel states. The zero-bias anomaly is the strongest peak in the parallel state and its intensity decreases with temperature. The magnon has the largest intensity in the antiparallel state and its intensity also decreases with temperature. The origins of the dips and peaks in the dI/dV-V curve are also discussed. |
| 语种 | 英语 |
| 公开日期 | 2014-01-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57775]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, D.L.,Feng, J.F.,Yu, G.Q.,et al. Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer[J]. Journal of Applied Physics,2013,114(21):213909 (5 pp.). |
| APA | Li, D.L..,Feng, J.F..,Yu, G.Q..,Guo, P..,Chen, J.Y..,...&Coey, J.M.D..(2013).Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer.Journal of Applied Physics,114(21),213909 (5 pp.). |
| MLA | Li, D.L.,et al."Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer".Journal of Applied Physics 114.21(2013):213909 (5 pp.). |
入库方式： OAI收割
来源：物理研究所
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