Tunable electroluminescence in planar graphene/SiO(2) memristors.
文献类型：期刊论文
| 作者 | He, Congli ; Li, Jiafang ; Wu, Xing ; Chen, Peng ; Zhao, Jing ; Yin, Kuibo ; Cheng, Meng ; Yang, Wei ; Xie, Guibai ; Wang, Duoming ; Liu, Donghua ; Yang, Rong ; Shi, Dongxia ; Li, Zhiyuan ; Sun, Litao ; Zhang, Guangyu |
| 刊名 | Advanced materials (Deerfield Beach, Fla.)
 |
| 出版日期 | 2013 |
| 卷号 | 25期号:39页码:5593 |
| ISSN号 | 1521-4095 |
| 中文摘要 | Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics. |
| 语种 | 英语 |
| 公开日期 | 2014-01-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57788]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | He, Congli,Li, Jiafang,Wu, Xing,et al. Tunable electroluminescence in planar graphene/SiO(2) memristors.[J]. Advanced materials (Deerfield Beach, Fla.),2013,25(39):5593. |
| APA | He, Congli.,Li, Jiafang.,Wu, Xing.,Chen, Peng.,Zhao, Jing.,...&Zhang, Guangyu.(2013).Tunable electroluminescence in planar graphene/SiO(2) memristors..Advanced materials (Deerfield Beach, Fla.),25(39),5593. |
| MLA | He, Congli,et al."Tunable electroluminescence in planar graphene/SiO(2) memristors.".Advanced materials (Deerfield Beach, Fla.) 25.39(2013):5593. |
入库方式： OAI收割
来源：物理研究所
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