Improvement of the thermal design in the SiC PVT growth process
文献类型：期刊论文
| 作者 | Yan JY(颜君毅) ; Chen QS(陈启生); Jiang YN(姜燕妮); Zhang H
|
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2014 |
| 卷号 | 385页码:34-37 |
| 通讯作者邮箱 | qschen@imech.ac.cn |
| 关键词 | Fluid flows Mass transfer Growth from vapor Semiconducting silicon compounds |
| ISSN号 | 0022-0248 |
| 产权排序 | [Yan, J-Y; Chen, Q-S; Jiang, Y-N] Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China; [Zhang, H.] Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China |
| 通讯作者 | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China. |
| 合作状况 | 国内 |
| 中文摘要 | The physical vapor transport (PVT) method is used to grow silicon carbide (SiC) crystals, which are difficult to be grown by other methods. In this paper, a field-coordination theory is involved to optimize the SiC PVT growth process. By using a finite volume-based computational method, we calculate the flow field as well as species concentration field before and after improvement of the thermal design, respectively. The shape of the SiC crystal grown using the improved thermal design is also shown. |
| 学科主题 | 微重力流体力学 |
| 分类号 | 二类/Q2 |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 关键词[WOS] | PHYSICAL-VAPOR TRANSPORT ; CONVECTIVE HEAT-TRANSFER ; SUBLIMATION GROWTH ; BULK GROWTH ; CRYSTALS ; KINETICS ; MODEL |
| 收录类别 | SCI ; EI |
| 资助信息 | The work was supported by the National Natural Science Foundation of China under Grant nos.10972226 and 11272320. |
| 原文出处 | http://dx.doi.org/10.1016/j.jcrysgro.2013.02.031 |
| 语种 | 英语 |
| WOS记录号 | WOS:000327250100007 |
| 公开日期 | 2014-02-13 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/48077]  |
| 专题 | 力学研究所_国家微重力实验室 |
| 推荐引用方式 GB/T 7714 | Yan JY,Chen QS,Jiang YN,et al. Improvement of the thermal design in the SiC PVT growth process[J]. Journal of Crystal Growth,2014,385:34-37. |
| APA | Yan JY,Chen QS,Jiang YN,&Zhang H.(2014).Improvement of the thermal design in the SiC PVT growth process.Journal of Crystal Growth,385,34-37. |
| MLA | Yan JY,et al."Improvement of the thermal design in the SiC PVT growth process".Journal of Crystal Growth 385(2014):34-37. |
入库方式： OAI收割
来源：力学研究所
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