Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping
文献类型：期刊论文
| 作者 | Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang |
| 刊名 | solar energy materials and solar cells
 |
| 出版日期 | 2013 |
| 卷号 | 113页码:144–147 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2014-02-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24476]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang. Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping[J]. solar energy materials and solar cells,2013,113:144–147. |
| APA | Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang.(2013).Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping.solar energy materials and solar cells,113,144–147. |
| MLA | Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang."Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping".solar energy materials and solar cells 113(2013):144–147. |
入库方式： OAI收割
来源：半导体研究所
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