Improvement of the thermal design in the SiC PVT growth process
文献类型：会议论文
| 作者 | Jiang YN(姜燕妮); Jiang YN(姜燕妮); Yan JY(颜君毅) ; Chen QS(陈启生); Zhang H
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| 出版日期 | 2014 |
| 会议名称 | 7th International Workshop on Modeling in Crystal Growth |
| 会议日期 | OCT 28-31, 2012 |
| 会议地点 | Taipei,TW, China |
| 通讯作者邮箱 | qschen@imech.ac.cn |
| 关键词 | Fluid flows Mass transfer Growth from vapor Semiconducting silicon compounds |
| 卷号 | 385 |
| 页码 | 34-37 |
| 通讯作者 | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China. |
| 中文摘要 | The physical vapor transport (PVT) method is used to grow silicon carbide (SiC) crystals, which are difficult to be grown by other methods. In this paper, a field-coordination theory is involved to optimize the SiC PVT growth process. By using a finite volume-based computational method, we calculate the flow field as well as species concentration field before and after improvement of the thermal design, respectively. The shape of the SiC crystal grown using the improved thermal design is also shown. |
| 收录类别 | CPCI-S |
| 合作状况 | 国内 |
| 产权排序 | [Yan, J-Y; Chen, Q-S; Jiang, Y-N] Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China; [Zhang, H.] Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China |
| 会议主办者 | Natl Taiwan Univ, Natl Cent Univ, Natl Sci Council Taiwan, Japanese Soc Promot Sci, German Assoc Crystal Growth;HO= |
| 会议网址 | http://dx.doi.org/10.1016/j.jcrysgro.2013.02.031 |
| 会议录 | JOURNAL OF CRYSTAL GROWTH
 |
| 会议录出版者 | ELSEVIER SCIENCE BV, AMSTERDAM |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| ISSN号 | 0022-0248 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/48259]  |
| 专题 | 力学研究所_国家微重力实验室 |
| 推荐引用方式 GB/T 7714 | Jiang YN,Jiang YN,Yan JY,et al. Improvement of the thermal design in the SiC PVT growth process[C]. 见:7th International Workshop on Modeling in Crystal Growth. Taipei,TW, China. OCT 28-31, 2012.http://dx.doi.org/10.1016/j.jcrysgro.2013.02.031. |
入库方式： OAI收割
来源：力学研究所
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