Photoelectron escape depth and inelastic secondaries in high-temperature superconductors
文献类型：期刊论文
| 作者 | Norman, MR ; Randeria, M ; Ding, H ; Campuzano, JC |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 1999 |
| 卷号 | 59期号:17页码:11191 |
| ISSN号 | 0163-1829 |
| 通讯作者 | Norman, MR (reprint author), Argonne Natl Lab, Div Mat Sci, 9700 S Cass Ave, Argonne, IL 60439 USA. |
| 中文摘要 | We calculate the photoelectron escape depth in the high-temperature superconductor Bi2212 by use of electron energy-loss spectroscopy data. We find that the escape depth is only 3 Angstrom for photon energies typically used in angle-resolved photoemission measurements. We then use this to estimate the number of inelastic secondaries, and find this to be quite small near the Fermi energy. This implies that the large background seen near the Fermi energy in photoemission measurements is of some other origin. [S0163-1829(99)08017-0]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2014-02-20 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/57974]  |
| 专题 | 物理研究所_所内人员在其他单位发表论文题录信息_所内人员在其他单位发表论文题录信息_期刊论文 |
| 推荐引用方式 GB/T 7714 | Norman, MR,Randeria, M,Ding, H,et al. Photoelectron escape depth and inelastic secondaries in high-temperature superconductors[J]. PHYSICAL REVIEW B,1999,59(17):11191. |
| APA | Norman, MR,Randeria, M,Ding, H,&Campuzano, JC.(1999).Photoelectron escape depth and inelastic secondaries in high-temperature superconductors.PHYSICAL REVIEW B,59(17),11191. |
| MLA | Norman, MR,et al."Photoelectron escape depth and inelastic secondaries in high-temperature superconductors".PHYSICAL REVIEW B 59.17(1999):11191. |
入库方式： OAI收割
来源：物理研究所
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