Evolution of the Fermi surface with carrier concentration in Bi2Sr2CaCu2O8+delta
文献类型:期刊论文
作者 | Ding, H ; Norman, MR ; Yokoya, T ; Takeuchi, T ; Randeria, M ; Campuzano, JC ; Takahashi, T ; Mochiku, T ; Kadowaki, K |
刊名 | PHYSICAL REVIEW LETTERS
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出版日期 | 1997 |
卷号 | 78期号:13页码:2628 |
关键词 | ANGLE-RESOLVED PHOTOEMISSION COHERENCE LENGTH SUPERCONDUCTORS ELECTRONIC-STRUCTURE NORMAL-STATE GAP YBA2CU3OX |
ISSN号 | 0031-9007 |
通讯作者 | Ding, H (reprint author), UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60607, USA. |
中文摘要 | We show, by use of angle-resolved photoemission spectroscopy, that underdoped Bi2Sr2CaCu2O8+delta appears to have a large Fermi surface centered at (pi, pi), even for samples with a T-c as low as 15 K. No clear evidence of a Fermi surface pocket around (pi/2, pi/2) has been found. These conclusions are based on a determination of the minimum gap locus in the pseudogap regime T-c < T < T*, which is found to coincide with the locus of gapless excitations in momentum space (Fermi surface) determined above T*. These results suggest that the pseudogap is more likely of precursor pairing rather than magnetic origin. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2014-02-20 |
源URL | [http://ir.iphy.ac.cn/handle/311004/57986] ![]() |
专题 | 物理研究所_所内人员在其他单位发表论文题录信息_所内人员在其他单位发表论文题录信息_期刊论文 |
推荐引用方式 GB/T 7714 | Ding, H,Norman, MR,Yokoya, T,et al. Evolution of the Fermi surface with carrier concentration in Bi2Sr2CaCu2O8+delta[J]. PHYSICAL REVIEW LETTERS,1997,78(13):2628. |
APA | Ding, H.,Norman, MR.,Yokoya, T.,Takeuchi, T.,Randeria, M.,...&Kadowaki, K.(1997).Evolution of the Fermi surface with carrier concentration in Bi2Sr2CaCu2O8+delta.PHYSICAL REVIEW LETTERS,78(13),2628. |
MLA | Ding, H,et al."Evolution of the Fermi surface with carrier concentration in Bi2Sr2CaCu2O8+delta".PHYSICAL REVIEW LETTERS 78.13(1997):2628. |
入库方式: OAI收割
来源:物理研究所
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