Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition
文献类型：期刊论文
| 作者 | T. Ma ; W. C. Ren ; X. Y. Zhang ; Z. B. Liu ; Y. Gao ; L. C. Yin ; X. L. Ma ; F. Ding ; H. M. Cheng |
| 刊名 | Proceedings of the National Academy of Sciences of the United States of America
 |
| 出版日期 | 2013 |
| 卷号 | 110期号:51页码:20386-20391 |
| 关键词 | two-dimensional materials crystal growth stability grains equilibrium nanoribbons films cu |
| ISSN号 | 0027-8424 |
| 原文出处 | |
| 语种 | 英语 |
| 公开日期 | 2014-02-19 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/72341]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | T. Ma,W. C. Ren,X. Y. Zhang,et al. Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition[J]. Proceedings of the National Academy of Sciences of the United States of America,2013,110(51):20386-20391. |
| APA | T. Ma.,W. C. Ren.,X. Y. Zhang.,Z. B. Liu.,Y. Gao.,...&H. M. Cheng.(2013).Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition.Proceedings of the National Academy of Sciences of the United States of America,110(51),20386-20391. |
| MLA | T. Ma,et al."Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition".Proceedings of the National Academy of Sciences of the United States of America 110.51(2013):20386-20391. |
入库方式： OAI收割
来源：金属研究所
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