Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique
文献类型：期刊论文
| 作者 | Hui Ma, Chongyun Jiang, Yu Liu, Laipan Zhu, Xudong Qin, Yonghai Chen |
| 刊名 | applied physics letters
 |
| 出版日期 | 2013 |
| 卷号 | 102期号:23页码:232402 - 232402-4 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2014-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24508]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Hui Ma, Chongyun Jiang, Yu Liu, Laipan Zhu, Xudong Qin, Yonghai Chen. Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique[J]. applied physics letters,2013,102(23):232402 - 232402-4. |
| APA | Hui Ma, Chongyun Jiang, Yu Liu, Laipan Zhu, Xudong Qin, Yonghai Chen.(2013).Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique.applied physics letters,102(23),232402 - 232402-4. |
| MLA | Hui Ma, Chongyun Jiang, Yu Liu, Laipan Zhu, Xudong Qin, Yonghai Chen."Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique".applied physics letters 102.23(2013):232402 - 232402-4. |
入库方式： OAI收割
来源：半导体研究所
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