InAs-mediated growth of vertical InSb nanowires on Si substrates
文献类型：期刊论文
| 作者 | Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang |
| 刊名 | nanoscale research letters
 |
| 出版日期 | 2013 |
| 卷号 | 8 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2014-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24492]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang. InAs-mediated growth of vertical InSb nanowires on Si substrates[J]. nanoscale research letters,2013,8. |
| APA | Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang.(2013).InAs-mediated growth of vertical InSb nanowires on Si substrates.nanoscale research letters,8. |
| MLA | Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang."InAs-mediated growth of vertical InSb nanowires on Si substrates".nanoscale research letters 8(2013). |
入库方式： OAI收割
来源：半导体研究所
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