中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN

文献类型:期刊论文

作者Chunming Yin , Hongtao Yuan , Xinqiang Wang , Shitao Liu , Shan Zhang , Ning Tang, Fujun Xu , Zhuoyu Chen , Hidekazu Shimotani, Yoshihiro Iwasa, Yonghai Chen, Weikun Ge , and Bo Shen
刊名nano letters
出版日期2013
卷号13期号:5页码:2024–2029
学科主题半导体材料
收录类别SCI
语种英语
公开日期2014-03-18
源URL[http://ir.semi.ac.cn/handle/172111/24511]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Chunming Yin , Hongtao Yuan , Xinqiang Wang , Shitao Liu , Shan Zhang , Ning Tang, Fujun Xu , Zhuoyu Chen , Hidekazu Shimotani, Yoshihiro Iwasa, Yonghai Chen, Weikun Ge , and Bo Shen. Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN[J]. nano letters,2013,13(5):2024–2029.
APA Chunming Yin , Hongtao Yuan , Xinqiang Wang , Shitao Liu , Shan Zhang , Ning Tang, Fujun Xu , Zhuoyu Chen , Hidekazu Shimotani, Yoshihiro Iwasa, Yonghai Chen, Weikun Ge , and Bo Shen.(2013).Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN.nano letters,13(5),2024–2029.
MLA Chunming Yin , Hongtao Yuan , Xinqiang Wang , Shitao Liu , Shan Zhang , Ning Tang, Fujun Xu , Zhuoyu Chen , Hidekazu Shimotani, Yoshihiro Iwasa, Yonghai Chen, Weikun Ge , and Bo Shen."Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN".nano letters 13.5(2013):2024–2029.

入库方式: OAI收割

来源:半导体研究所

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