Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome structures
文献类型：期刊论文
| 作者 | Ke-Fan Wang, Shengchun Qu, Dewei Liu, Kong Liu, Jian Wang, Li Zhao, Hongliang Zhu, Zhanguo Wang |
| 刊名 | materials letters
 |
| 出版日期 | 2013 |
| 卷号 | 107页码:50–52 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2014-03-18 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24525]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Ke-Fan Wang, Shengchun Qu, Dewei Liu, Kong Liu, Jian Wang, Li Zhao, Hongliang Zhu, Zhanguo Wang. Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome structures[J]. materials letters,2013,107:50–52. |
| APA | Ke-Fan Wang, Shengchun Qu, Dewei Liu, Kong Liu, Jian Wang, Li Zhao, Hongliang Zhu, Zhanguo Wang.(2013).Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome structures.materials letters,107,50–52. |
| MLA | Ke-Fan Wang, Shengchun Qu, Dewei Liu, Kong Liu, Jian Wang, Li Zhao, Hongliang Zhu, Zhanguo Wang."Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome structures".materials letters 107(2013):50–52. |
入库方式： OAI收割
来源：半导体研究所
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